TPW1R104PB,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A 8DSOP

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A 8DSOP

Technical Specifications

Parameters and characteristics for this part

Specification	TPW1R104PB,L1XHQ

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	4560 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	132 W, 960 mW
Rds On (Max) @ Id, Vgs	1.14 mOhm
Supplier Device Package	8-DSOP Advance
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature	Technology	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TPW1R104PB,L1XHQ	Surface Mount	132 W 960 mW	6 V 10 V	20 V	120 A	55 nC	4560 pF	8-DSOP Advance	8-PowerVDFN	40 V	N-Channel	3 V	175 °C	MOSFET (Metal Oxide)	1.14 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly