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71T75902S75PFGI - 71T75902 - Block Diagram

71T75902S75PFGI

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Renesas Electronics Corporation

2.5V 1M X 18 ZBT SYNCHRONOUS 2.5V I/O FLOW-THROUGH SRAM

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71T75902S75PFGI - 71T75902 - Block Diagram

71T75902S75PFGI

Active
Renesas Electronics Corporation

2.5V 1M X 18 ZBT SYNCHRONOUS 2.5V I/O FLOW-THROUGH SRAM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification71T75902S75PFGI
Access Time7.5 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization1M x 18
Memory Size18 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case100-LQFP
Supplier Device Package100-TQFP
TechnologySRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]2.625 V
Voltage - Supply [Min]2.375 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 72$ 40.90

Description

General part information

71T75902 Series

The 71T75902 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround.

Documents

Technical documentation and resources