2SK3466(TE24L,Q)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 5A 4TFP

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 5A 4TFP

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3466(TE24L,Q)

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	780 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs [Max]	1.5 Ohm
Supplier Device Package	4-TFP (9.2x9.2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Mounting Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs (Max)	FET Type	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]
Toshiba Semiconductor and Storage 2SK3466(TE24L,Q)	Surface Mount	50 W	10 V	500 V	1.5 Ohm	MOSFET (Metal Oxide)	30 V	N-Channel	150 °C	17 nC	4-TFP (9.2x9.2)	5 A	780 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 5A (Ta) 50W (Tc) Surface Mount 4-TFP (9.2x9.2)

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