PJQ2407_R1_00001

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Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ2407_R1_00001

Current - Continuous Drain (Id) @ 25°C	8.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	1169 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	DFN2020B-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Drain to Source Voltage (Vdss)
Panjit International Inc. PJQ2407_R1_00001	Surface Mount	11 nC	8.4 A	2.5 V	2 W	DFN2020B-6	20 mOhm	20 V	4.5 V 10 V	1169 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	P-Channel	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 8.4A (Ta) 2W (Ta) Surface Mount DFN2020B-6

Technical documentation and resources

No documents available