AOD603A

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Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 60V 3.5A TO252-4L

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Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 60V 3.5A TO252-4L

Technical Specifications

Parameters and characteristics for this part

Specification	AOD603A

Configuration	Common Drain, N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.5 A, 3 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	DPAK (4 Leads + Tab), TO-252-5, TO-252AD
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	60 mOhm
Supplier Device Package	TO-252-4L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Feature	Configuration	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Power - Max [Max]	Mounting Type
Alpha & Omega Semiconductor Inc. AOD603A	-55 °C	175 ░C	60 mOhm	DPAK (4 Leads + Tab) TO-252-5 TO-252AD	540 pF	10 nC	TO-252-4L	Logic Level Gate	Common Drain N and P-Channel	60 V	3 A 3.5 A	3 V	MOSFET (Metal Oxide)	2 W	Surface Mount

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