2SK2266(TE24R,Q)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220SM

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2266(TE24R,Q)

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-220SM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage 2SK2266(TE24R,Q)	20 V	60 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-220SM	2 V	4 V	10 V	30 mOhm	60 nC	65 W	150 °C	MOSFET (Metal Oxide)	1800 pF	Surface Mount	45 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 45A (Ta) 65W (Tc) Surface Mount TO-220SM

Technical documentation and resources