PJQ4413P_R2_00001

NRND

Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

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NRND

Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4413P_R2_00001

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds	516 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type
Panjit International Inc. PJQ4413P_R2_00001	20 V	MOSFET (Metal Oxide)	5 A	4.5 V 10 V	4.8 nC	50 mOhm	8-PowerVDFN	2 W	Surface Mount	-55 °C	150 °C	30 V	2.5 V	516 pF	DFN3333-8	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 5A (Ta) 2W (Ta) Surface Mount DFN3333-8

Technical documentation and resources