SH8K52GZETB

NRND

Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

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NRND

Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8K52GZETB

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds	610 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Supplier Device Package
Rohm Semiconductor SH8K52GZETB	8.5 nC	MOSFET (Metal Oxide)	2 N-Channel (Dual)	3 A	2.5 V	100 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	150 °C	170 mOhm	610 pF	1.4 W	8-SOP

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General part information

Mosfet Array 100V 3A (Ta) 1.4W (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available