HERAF1606G

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Taiwan Semiconductor Corporation

80NS, 16A, 600V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

80NS, 16A, 600V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HERAF1606G

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	80 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Technology	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation HERAF1606G	600 V	Through Hole	200 mA 500 ns	Standard	TO-220-2 Full Pack	80 ns	16 A	10 µA	110 pF	150 °C	-55 °C	ITO-220AC	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.53

General part information

Diode 600 V 16A Through Hole ITO-220AC

Technical documentation and resources