1N3893R

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GeneSiC Semiconductor

DIODE GEN PURP REV 600V 12A DO4

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GeneSiC Semiconductor

DIODE GEN PURP REV 600V 12A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N3893R

Current - Average Rectified (Io)	12 A
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Technology	Current - Average Rectified (Io)	Speed	Package / Case
GeneSiC Semiconductor 1N3893R	150 °C	-65 C	200 ns	DO-4	600 V	1.4 V	Chassis Stud Mount	Reverse Polarity Standard	12 A	200 mA 500 ns	DO-203AA DO-4 Stud

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General part information

Diode 600 V 12A Chassis, Stud Mount DO-4

Technical documentation and resources