2SJ681(Q)

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD2

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD2

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ681(Q)

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max) [Max]	20 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	PW-MOLD2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	FET Type	Power Dissipation (Max) [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Vgs(th) (Max) @ Id	Technology	Vgs (Max)
Toshiba Semiconductor and Storage 2SJ681(Q)	P-Channel	20 W	TO-251-3 Stub Leads IPAK	700 pF	Through Hole	4 V	10 V	PW-MOLD2	170 mOhm	60 V	5 A	150 °C	2 V	MOSFET (Metal Oxide)	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 5A (Ta) 20W (Ta) Through Hole PW-MOLD2

Technical documentation and resources