TN2907A

Obsolete

ON Semiconductor

TRANS PNP 60V 0.8A TO226-3

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS PNP 60V 0.8A TO226-3

Technical Specifications

Parameters and characteristics for this part

Specification	TN2907A

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-226-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor TN2907A	TO-226-3 TO-92-3	-55 °C	150 °C	800 mA	PNP	100	Through Hole	625 mW	0.01 µA	60 V	TO-226-3	1.6 V
ON Semiconductor TN2907A	TO-226-3 TO-92-3	-55 °C	150 °C	800 mA	PNP	100	Through Hole	625 mW	0.01 µA	60 V	TO-226-3	1.6 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 60 V 800 mA 625 mW Through Hole TO-226-3

Technical documentation and resources

No documents available