CR6AF2GPP BK

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Central Semiconductor Corp

DIODE GEN PURP 200V 6A 106

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Central Semiconductor Corp

DIODE GEN PURP 200V 6A 106

Technical Specifications

Parameters and characteristics for this part

Specification	CR6AF2GPP BK

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	106
Package / Case	Axial
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	106
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Supplier Device Package	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Technology	Package / Case	Package / Case	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Central Semiconductor Corp CR6AF2GPP BK	106	6 A	200 ns	175 ░C	-65 C	Through Hole	200 mA 500 ns	Standard	106	Axial	1.3 V	200 V	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 6A Through Hole 106

Technical documentation and resources