SP8K2FU6TB

Obsolete

Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8SOP

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Obsolete

Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SP8K2FU6TB

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10.1 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Configuration	Power - Max [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature
Rohm Semiconductor SP8K2FU6TB	8-SOP	6 A	30 V	2.5 V	10.1 nC	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	2 N-Channel (Dual)	2 W	Surface Mount	30 mOhm	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 6A 2W Surface Mount 8-SOP

Technical documentation and resources