S40KR

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GeneSiC Semiconductor

DIODE GP REV 800V 40A DO203AB

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GeneSiC Semiconductor

DIODE GP REV 800V 40A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	S40KR

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Supplier Device Package	DO-203AB
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Speed	Package / Case	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor S40KR	190 °C	-65 C	Stud Mount	10 µA	Standard Recovery >500ns	200 mA	DO-203AB DO-5 Stud	DO-5	DO-203AB	800 V	40 A	Reverse Polarity Standard	1.1 V

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General part information

Diode 800 V 40A Stud Mount DO-203AB (DO-5)

Technical documentation and resources