PSMB050N10NS2_R2_00601

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Panjit International Inc.

100V/ 5MOHM/ LOW FOM MOSFET

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Active

Panjit International Inc.

100V/ 5MOHM/ LOW FOM MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PSMB050N10NS2_R2_00601

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	3910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	138 W
Rds On (Max) @ Id, Vgs [Max]	5 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Panjit International Inc. PSMB050N10NS2_R2_00601	N-Channel	-55 °C	150 °C	138 W	3.8 V	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 mOhm	Surface Mount	3910 pF	53 nC	MOSFET (Metal Oxide)	TO-263	100 V	20 V	6 V 10 V

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General part information

N-Channel 100 V 120A (Tj) 138W (Tc) Surface Mount TO-263

Technical documentation and resources