RQ6E035TNTR
ActiveRohm Semiconductor
MOSFET, N-CH, 30V, 3.5A, 150DEG C, 1.25W
Deep-Dive with AI
Search across all available documentation for this part.
RQ6E035TNTR
ActiveRohm Semiconductor
MOSFET, N-CH, 30V, 3.5A, 150DEG C, 1.25W
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ6E035TNTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 285 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power Dissipation (Max) [Max] | 950 mW |
| Rds On (Max) @ Id, Vgs | 54 mOhm |
| Supplier Device Package | TSMT6 (SC-95) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ6E035AT Series
RQ6E035TN is the low on - resistance MOSFET, built-in G-S protection diode for switching application.
Documents
Technical documentation and resources