CPD16-CMR1U-06M-CT

Active

Central Semiconductor Corp

DIODE GEN PURP 600V 1A DIE 1=400

Search across all available documentation for this part.

Active

Central Semiconductor Corp

DIODE GEN PURP 600V 1A DIE 1=400

Technical Specifications

Parameters and characteristics for this part

Specification	CPD16-CMR1U-06M-CT

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Die
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Reverse Recovery Time (trr)	Technology	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Speed
Central Semiconductor Corp CPD16-CMR1U-06M-CT	150 °C	-65 C	1.4 V	600 V	1 A	Die	75 ns	Standard	Die	Surface Mount	5 µA	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 1A Surface Mount Die

Technical documentation and resources