VS-VSKE250-08PBF
ActiveVishay General Semiconductor - Diodes Division
DIODE GP 800V 250A MAGNAPAK
Deep-Dive with AI
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VS-VSKE250-08PBF
ActiveVishay General Semiconductor - Diodes Division
DIODE GP 800V 250A MAGNAPAK
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-VSKE250-08PBF |
|---|---|
| Current - Average Rectified (Io) | 250 A |
| Current - Reverse Leakage @ Vr | 50 mA |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | 3-MAGN-A-PAK™ |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | MAGN-A-PAK® |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 2 | $ 123.23 | |
| 10 | $ 114.07 | |||
Description
General part information
VSKE250 Series
Diode 800 V 250A Chassis Mount MAGN-A-PAK®
Documents
Technical documentation and resources
No documents available