VT10200C-E3/4W

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Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 200V 5A TO220-3

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Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 200V 5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	VT10200C-E3/4W

Current - Average Rectified (Io) (per Diode)	5 A
Current - Reverse Leakage @ Vr	150 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Mounting Type	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VT10200C-E3/4W	200 V	1.6 V	Schottky	TO-220-3	150 µA	200 mA 500 ns	TO-220-3	Through Hole	5 A	1 Pair Common Cathode	150 °C	-40 °C

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General part information

Diode Array 1 Pair Common Cathode 200 V 5A Through Hole TO-220-3

Technical documentation and resources

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