30JL2C41(F)

Obsolete

Toshiba Semiconductor and Storage

DIODE ARRAY GP 600V 15A TO3P

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Obsolete

Toshiba Semiconductor and Storage

DIODE ARRAY GP 600V 15A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	30JL2C41(F)

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	50 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SC-65-3, TO-3P-3
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-3P(N)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Speed	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type	Supplier Device Package
Toshiba Semiconductor and Storage 30JL2C41(F)	200 mA 500 ns	1 Pair Common Cathode	150 °C	-40 °C	50 µA	50 ns	15 A	2 V	Standard	600 V	SC-65-3 TO-3P-3	Through Hole	TO-3P(N)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 600 V 15A Through Hole TO-3P-3, SC-65-3

Technical documentation and resources

No documents available