JAN1N6627U

Active

Microsemi Corporation

DIODE GEN PURP 400V 1.75A D-5B

Search across all available documentation for this part.

Active

Microsemi Corporation

DIODE GEN PURP 400V 1.75A D-5B

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N6627U

Current - Average Rectified (Io)	1.75 A
Current - Reverse Leakage @ Vr	2 µA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	E, SQ-MELF
Qualification	MIL-PRF-19500/590
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	D-5B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V

Part	Grade	Mounting Type	Supplier Device Package	Qualification	Current - Average Rectified (Io)	Package / Case	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
Microsemi Corporation JAN1N6627U	Military	Surface Mount	D-5B	MIL-PRF-19500/590	1.75 A	E SQ-MELF	30 ns	150 °C	-65 C	200 mA 500 ns	2 µA	Standard	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 12.30

General part information

Diode 400 V 1.75A Surface Mount D-5B

Technical documentation and resources

No documents available