CTLSH1-40M832DS TR

Obsolete

Central Semiconductor Corp

DIODE SCHOTTKY 40V 1A TLM832DS

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Obsolete

Central Semiconductor Corp

DIODE SCHOTTKY 40V 1A TLM832DS

Technical Specifications

Parameters and characteristics for this part

Specification	CTLSH1-40M832DS TR

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	8-TDFN Exposed Pad
Speed	200 mA, 500 ns
Supplier Device Package	TLM832DS
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Capacitance @ Vr, F	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Package / Case
Central Semiconductor Corp CTLSH1-50M832DS BK	550 mV	Schottky	150 °C	-65 C	50 V	1 A	TLM832DS	50 pF	Surface Mount	200 mA 500 ns	500 µA	8-TDFN Exposed Pad
Central Semiconductor Corp CTLSH1-40M832DS TR	550 mV	Schottky	150 °C	-65 C	40 V	1 A	TLM832DS	50 pF	Surface Mount	200 mA 500 ns	200 µA	8-TDFN Exposed Pad

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 40 V 1A Surface Mount TLM832DS

Technical documentation and resources