The IS61LV6416-10TL is a 64K x 16-bit high-speed CMOS Static Random Access Memory (SRAM) with 3.3V supply. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using chip enable and output enable inputs CE and OE. The active LOW write enable (WE) controls both writing and reading of the memory. A data byte allows upper byte (UB) and lower byte (LB) access.