E6D20065G

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Wolfspeed

DIODE SIC 650V 68A TO263

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Wolfspeed

DIODE SIC 650V 68A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	E6D20065G

Capacitance @ Vr, F	1277 pF
Current - Average Rectified (Io)	68 A
Current - Reverse Leakage @ Vr	75 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-263-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Mounting Type	Qualification	Technology	Current - Reverse Leakage @ Vr	Diode Configuration	Current - Average Rectified (Io) (per Diode)
Wolfspeed E6D20065A	No Recovery Time	68 A	1.5 V	1277 pF	650 V	Automotive	TO-220-2	175 ░C	-55 C	TO-220-2	Through Hole	AEC-Q101	SiC (Silicon Carbide) Schottky	75 µA
Wolfspeed E6D20065D	No Recovery Time		1.5 V		650 V		TO-247-3	175 ░C	-55 C	TO-247-3	Through Hole		SiC (Silicon Carbide) Schottky	50 µA	1 Pair Common Cathode	34 A
Wolfspeed E6D20065G	No Recovery Time	68 A	1.5 V	1277 pF	650 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 ░C	-55 C	TO-263-2	Surface Mount		SiC (Silicon Carbide) Schottky	75 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 68A Surface Mount TO-263-2

Technical documentation and resources