PJS6417_S1_00001

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Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6417_S1_00001

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18.9 nC
Input Capacitance (Ciss) (Max) @ Vds	1760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJS6417_S1_00001	SOT-23-6	-55 °C	150 °C	MOSFET (Metal Oxide)	P-Channel	6.5 A	SOT-23-6	2 W	20 V	8 V	1760 pF	18.9 nC	900 mV	1.8 V 4.5 V	Surface Mount	35 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 6.5A (Ta) 2W (Ta) Surface Mount SOT-23-6

Technical documentation and resources