MT53E256M16D1FW-046 AUT:B

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Micron Technology Inc.

LPDRAM MEMORY AUTOMOTIVE AEC-Q100

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MT53E256M16D1FW-046 AUT:B

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Micron Technology Inc.

LPDRAM MEMORY AUTOMOTIVE AEC-Q100

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E256M16D1FW-046 AUT:B

Clock Frequency	2.133 GHz
Grade	Automotive
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	256 M
Memory Size	512 kb
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	200-TFBGA
Qualification	AEC-Q100
Supplier Device Package	200-TFBGA
Supplier Device Package [x]	10
Supplier Device Package [y]	14.5
Technology	SDRAM - Mobile LPDDR4X
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E256 Series

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Technology	Memory Interface	Qualification	Memory Organization	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Memory Format	Memory Type	Memory Size	Write Cycle Time - Word, Page	Grade	Clock Frequency	Voltage - Supply
Micron Technology Inc. MT53E256M16D1FW-046 AUT:B	1.06 V	1.17 V	Surface Mount	14.5	10	200-TFBGA	SDRAM - Mobile LPDDR4X	Parallel	AEC-Q100	256 M	200-TFBGA	125 °C	-40 °C	DRAM	Volatile	512 kb	18 ns	Automotive	2.133 GHz
Micron Technology Inc. MT53E256M16D1FW-046 AAT:B	1.06 V	1.17 V	Surface Mount	14.5	10	200-TFBGA	SDRAM - Mobile LPDDR4X	Parallel	AEC-Q100	256 M	200-TFBGA	105 °C	-40 °C	DRAM	Volatile	512 kb	18 ns	Automotive	2.133 GHz
Micron Technology Inc. MT53E256M32D2DS-053 AAT:B TR			Surface Mount			200-WFBGA (10x14.5)	SDRAM - Mobile LPDDR4		AEC-Q100	256 M	200-WFBGA	105 °C	-40 °C	DRAM	Volatile	1024 KB		Automotive	1866 MHz	1.1 V
Micron Technology Inc. MT53E256M16D1FW-046 WT:B	1.06 V	1.17 V	Surface Mount	14.5	10	200-TFBGA	SDRAM - Mobile LPDDR4X	Parallel		256 M	200-TFBGA	85 °C	-30 °C	DRAM	Volatile	512 kb	18 ns		2.133 GHz
Micron Technology Inc. MT53E256M32D2FW-046 WT:B TR	1.06 V	1.17 V	Surface Mount	14.5	10	200-TFBGA	SDRAM - Mobile LPDDR4X	Parallel		256 M	200-TFBGA	85 °C	-30 °C	DRAM	Volatile	1024 KB	18 ns		2.133 GHz
Micron Technology Inc. MT53E256M32D2FW-046 IT:B TR	1.06 V	1.17 V	Surface Mount	14.5	10	200-TFBGA	SDRAM - Mobile LPDDR4X	Parallel		256 M	200-TFBGA	95 °C	-40 °C	DRAM	Volatile	1024 KB	18 ns		2.133 GHz
Micron Technology Inc. MT53E256M32D2DS-053 AIT:B TR			Surface Mount			200-WFBGA (10x14.5)	SDRAM - Mobile LPDDR4		AEC-Q100	256 M	200-WFBGA	95 °C	-40 °C	DRAM	Volatile	1024 KB		Automotive	1866 MHz	1.1 V
Micron Technology Inc. MT53E256M16D1FW-046 WT:B TR	1.06 V	1.17 V	Surface Mount	14.5	10	200-TFBGA	SDRAM - Mobile LPDDR4X	Parallel		256 M	200-TFBGA	85 °C	-30 °C	DRAM	Volatile	512 kb	18 ns		2.133 GHz
Micron Technology Inc. MT53E256M32D2DS-053 WT:B			Surface Mount			200-WFBGA (10x14.5)	SDRAM - Mobile LPDDR4			256 M	200-WFBGA	85 °C	-30 °C	DRAM	Volatile	1024 KB			1866 MHz	1.1 V
Micron Technology Inc. MT53E256M32D2DS-053 AAT:B			Surface Mount			200-WFBGA (10x14.5)	SDRAM - Mobile LPDDR4		AEC-Q100	256 M	200-WFBGA	105 °C	-40 °C	DRAM	Volatile	1024 KB		Automotive	1866 MHz	1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MT53E256 Series

SDRAM - Mobile LPDDR4X Memory IC 4Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)

Documents

Technical documentation and resources

No documents available