VS-1N3214

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A DO203AB

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N3214

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	10 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Supplier Device Package	DO-203AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	15 A, 1.5 V

Part	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Technology	Supplier Device Package	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed
Vishay General Semiconductor - Diodes Division VS-1N3214	10 mA	Chassis Stud Mount	600 V	1.5 V 15 A	15 A	DO-203AB DO-5 Stud	Standard	DO-5	DO-203AB	175 ░C	-65 C	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 15A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources