GBPC3504W

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GeneSiC Semiconductor

BRIDGE RECT 1P 400V 35A GBPC-W

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GeneSiC Semiconductor

BRIDGE RECT 1P 400V 35A GBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC3504W

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBPC-W, 4-Square
Supplier Device Package	GBPC-W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	400 V

Part	Diode Type	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Forward (Vf) (Max) @ If	Voltage - Peak Reverse (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io)	Package / Case
GeneSiC Semiconductor GBPC3504W	Single Phase	Standard	5 µA	Through Hole	-55 °C	150 °C	1.1 V	400 V	GBPC-W	35 A	4-Square GBPC-W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 400 V Through Hole GBPC-W

Technical documentation and resources