MBR60045CTL

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 45V 300A 2TOWER

Search across all available documentation for this part.

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 45V 300A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR60045CTL

Current - Average Rectified (Io) (per Diode)	300 A
Current - Reverse Leakage @ Vr	5 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If	600 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Speed	Technology	Mounting Type	Diode Configuration	Supplier Device Package
GeneSiC Semiconductor MBR60045CTRL	45 V	Twin Tower	5 mA	300 A	150 °C	-55 °C	600 mV	200 mA 500 ns	Schottky	Chassis Mount	1 Pair Common Anode	Twin Tower
GeneSiC Semiconductor MBR60045CTL	45 V	Twin Tower	5 mA	300 A	150 °C	-55 °C	600 mV	200 mA 500 ns	Schottky	Chassis Mount	1 Pair Common Cathode	Twin Tower

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 45 V 300A Chassis Mount Twin Tower

Technical documentation and resources