SI9410DY,518

Obsolete

Freescale Semiconductor - NXP

MOSFET N-CH 30V SOT96-1

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Obsolete

Freescale Semiconductor - NXP

MOSFET N-CH 30V SOT96-1

Technical Specifications

Parameters and characteristics for this part

Specification	SI9410DY,518

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Freescale Semiconductor - NXP SI9410DY,518	-55 °C	150 °C	2.5 W	Surface Mount	20 V	30 mOhm	7 A	N-Channel	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	1 V	4.5 V 10 V	30 V	50 nC	8-SO

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 7A (Tj) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources