ZVN2110GTA

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Diodes Inc

TRANS MOSFET N-CH 100V 0.5A 4-PIN(3+TAB) SOT-223 T/R

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Active

Diodes Inc

TRANS MOSFET N-CH 100V 0.5A 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	ZVN2110GTA

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	75 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SOT-223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

N-Channel Enhancement Mode Vertical DMOS FET

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Power Dissipation (Max)
Diodes Inc ZVN2110GTA	500 mA	-55 °C	150 °C	SOT-223-3	4 Ohm	Surface Mount	75 pF	10 V	MOSFET (Metal Oxide)	20 V	2.4 V	2 W	100 V	TO-261-4 TO-261AA	N-Channel
Diodes Inc ZVN2110ASTZ	320 mA	-55 °C	150 °C	E-Line (TO-92 compatible)	4 Ohm	Through Hole	75 pF	10 V	MOSFET (Metal Oxide)	20 V	2.4 V		100 V	E-Line-3	N-Channel	700 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Enhancement Mode Vertical DMOS FET

Technical documentation and resources