2N7000

Obsolete

STMicroelectronics

MOSFET N-CH 60V 350MA TO92-3

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Obsolete

STMicroelectronics

MOSFET N-CH 60V 350MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N7000

Current - Continuous Drain (Id) @ 25°C	350 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	43 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	18 V
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)
STMicroelectronics 2N7002	5 Ohm	60 V	18 V	350 mW	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	43 pF	N-Channel	4.5 V 10 V	SOT-23-3	3 V	-55 °C	150 °C	200 mA	Surface Mount
STMicroelectronics 2N7000	5 Ohm	60 V	18 V		MOSFET (Metal Oxide)	TO-226-3 TO-92-3	43 pF	N-Channel	4.5 V 10 V	TO-92-3	3 V	-55 °C	150 °C	350 mA	Through Hole	1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 350mA (Tc) 1W (Tc) Through Hole TO-92-3

Technical documentation and resources