SH8KC7TB1
ActiveRohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 10.5A I(D), 60V, 0.0172OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8
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SH8KC7TB1
ActiveRohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 10.5A I(D), 60V, 0.0172OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | SH8KC7TB1 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 10.5 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 12.4 mOhm |
| Supplier Device Package | 8-SOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
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Description
General part information
SH8KC7 Series
SH8KC7 is a low on-resistance MOSFET ideal for switching applications. This product includes two 60V MOSFETs in a small surface mount package (SOP8).
Documents
Technical documentation and resources