DSEP40-03AS-TRL

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IXYS

DIODE GEN PURP 300V 40A TO263AA

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IXYS

DIODE GEN PURP 300V 40A TO263AA

Technical Specifications

Parameters and characteristics for this part

Specification	DSEP40-03AS-TRL

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.44 V

Part	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology
IXYS DSEP40-03AS-TRL	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	40 A	5 µA	TO-263AA	50 pF	35 ns	300 V	1.44 V	200 mA 500 ns	175 ░C	-55 C	Surface Mount	Standard

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General part information

Diode 300 V 40A Surface Mount TO-263AA

Technical documentation and resources