PJQ5445-AU_R2_000A1

Active

Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

Search across all available documentation for this part.

Active

Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5445-AU_R2_000A1

Current - Continuous Drain (Id) @ 25°C	45 A, 8.5 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2030 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	63 W, 2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Package / Case	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Qualification	Technology	Drive Voltage (Max Rds On, Min Rds On)	Grade	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJQ5445-AU_R2_000A1	19 nC	2 W 63 W	8-PowerVDFN	Surface Mount	DFN5060-8	2030 pF	-55 °C	150 °C	20 V	P-Channel	AEC-Q101	MOSFET (Metal Oxide)	4.5 V 10 V	Automotive	40 V	2.5 V	8.5 A 45 A	17 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 8.5A (Ta), 45A (Tc) 2W (Ta), 63W (Tc) Surface Mount DFN5060-8

Technical documentation and resources

No documents available