VS-183NQ100PBF

Active

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 180A D-67

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 180A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	VS-183NQ100PBF

Capacitance @ Vr, F	4150 pF
Current - Average Rectified (Io)	180 A
Current - Reverse Leakage @ Vr	4.5 mA
Mounting Type	Chassis Mount
Package / Case	D-67 HALF-PAK
Speed	200 mA, 500 ns
Supplier Device Package	D-67 HALF-PAK
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	910 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Technology
Vishay General Semiconductor - Diodes Division VS-183NQ100PBF	100 V	D-67 HALF-PAK	200 mA 500 ns	910 mV	4150 pF	4.5 mA	Chassis Mount	D-67 HALF-PAK	180 A	Schottky
Vishay General Semiconductor - Diodes Division 183NQ100R	100 V	D-67 HALF-PAK	200 mA 500 ns	950 mV	4150 pF	4.5 mA	Chassis Mount	D-67 HALF-PAK	180 A	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 180A Chassis Mount D-67 HALF-PAK

Technical documentation and resources