BYV42E-200,127

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 200V 30A TO220AB

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 200V 30A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	BYV42E-200,127

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	28 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.2 V

Part	Technology	Mounting Type	Package / Case	Diode Configuration	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Supplier Device Package	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr
WeEn Semiconductors Co., Ltd BYV42E-200,127	Standard	Through Hole	TO-220-3	1 Pair Common Cathode	200 mA 500 ns	1.2 V	200 V	150 °C	TO-220AB	28 ns	30 A	100 µA
WeEn Semiconductors Co., Ltd BYV42E-150,127	Standard	Through Hole	TO-220-3	1 Pair Common Cathode	200 mA 500 ns	1.2 V		150 °C	TO-220AB	28 ns	30 A
WeEn Semiconductors Co., Ltd BYV42EB-200,118	Standard	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1 Pair Common Cathode	200 mA 500 ns	1.2 V	200 V	150 °C	D2PAK	28 ns	30 A	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 200 V 30A Through Hole TO-220-3

Technical documentation and resources

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