PJW3P06A-AU_R2_000A1

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJW3P06A-AU_R2_000A1

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Grade	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Panjit International Inc. PJW3P06A-AU_R2_000A1	TO-261-4 TO-261AA	Automotive	20 V	4.5 V 10 V	3.1 W	P-Channel	MOSFET (Metal Oxide)	60 V	3 A	2.5 V	8.3 nC	170 mOhm	430 pF	AEC-Q101	SOT-223	Surface Mount	-55 °C	150 °C
Panjit International Inc. PJW3P06A_R2_00001	TO-261-4 TO-261AA		20 V	4.5 V 10 V	3.1 W	P-Channel	MOSFET (Metal Oxide)	60 V	3 A	2.5 V	8.3 nC	190 mOhm	430 pF		SOT-223	Surface Mount	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 3A (Ta) 3.1W (Ta) Surface Mount SOT-223

Technical documentation and resources