HER307G

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Taiwan Semiconductor Corporation

75NS, 3A, 800V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

75NS, 3A, 800V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HER307G

Capacitance @ Vr, F	35 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Reverse Recovery Time (trr)	Supplier Device Package	Capacitance @ Vr, F	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Mounting Type
Taiwan Semiconductor Corporation HER307G	75 ns	DO-201AD	35 pF	200 mA 500 ns	Standard	800 V	10 µA	150 °C	-55 °C	DO-201AD Axial	1.7 V	3 A	Through Hole

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General part information

Diode 800 V 3A Through Hole DO-201AD

Technical documentation and resources