PJW3P10A_R2_00001

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Panjit International Inc.

100V P-CHANNEL ENHANCEMENT MODE

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Panjit International Inc.

100V P-CHANNEL ENHANCEMENT MODE

Technical Specifications

Parameters and characteristics for this part

Specification	PJW3P10A_R2_00001

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1419 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	FET Type	Vgs (Max)	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Panjit International Inc. PJW3P10A_R2_00001	Surface Mount	P-Channel	20 V	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	2.6 A	1419 pF	3.1 W	20 nC	4.5 V 10 V	100 V	SOT-223	3 V	210 mOhm	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 2.6A (Ta) 3.1W (Ta) Surface Mount SOT-223

Technical documentation and resources