2DB1182Q-13

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 2A I(C), 32V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-252, PLASTIC/EPOXY, 2 PIN, GREEN, PLASTIC PACKAGE-3/2

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 2A I(C), 32V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-252, PLASTIC/EPOXY, 2 PIN, GREEN, PLASTIC PACKAGE-3/2

Technical Specifications

Parameters and characteristics for this part

Specification	2DB1182Q-13

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	110 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	10 W
Qualification	AEC-Q101
Supplier Device Package	TO-252-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

PNP, 32V, 2A, TO252

Part	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Supplier Device Package	Power - Max [Max]	Frequency - Transition	Qualification	Package / Case	Current - Collector Cutoff (Max) [Max]
Diodes Inc 2DB1182Q-13	2 A	Surface Mount	120	Automotive	800 mV	-55 °C	150 °C	32 V	PNP	TO-252-3	10 W	110 MHz	AEC-Q101	DPAK (2 Leads + Tab) SC-63 TO-252-3	1 µA

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