2N3019

Obsolete

STMicroelectronics

TRANS NPN 80V 1A TO39

Search across all available documentation for this part.

Obsolete

STMicroelectronics

TRANS NPN 80V 1A TO39

Technical Specifications

Parameters and characteristics for this part

Specification	2N3019

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	800 mW
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Transistor Type	Power - Max [Max]	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
STMicroelectronics 2N3019	TO-205AD TO-39-3 Metal Can	Through Hole	500 mV	0.01 µA	NPN	800 mW	TO-39	100 MHz	100	175 °C	80 V	1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 800 mW Through Hole TO-39

Technical documentation and resources