SGW10N60RUFDTM

Obsolete

ON Semiconductor

IGBT 600V 16A 75W D2PAK

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Obsolete

ON Semiconductor

IGBT 600V 16A 75W D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SGW10N60RUFDTM

Current - Collector (Ic) (Max) [Max]	16 A
Current - Collector Pulsed (Icm)	30 A
Gate Charge	30 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	75 W
Reverse Recovery Time (trr)	60 ns
Supplier Device Package	TO-263 (D2PAK)
Switching Energy	215 µJ, 141 µJ
Td (on/off) @ 25°C	15 ns, 36 ns
Test Condition	20 Ohm, 10 A, 300 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Mounting Type	Supplier Device Package	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Package / Case	Gate Charge	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Test Condition	Current - Collector Pulsed (Icm)	Power - Max [Max]
ON Semiconductor SGW10N60RUFDTM	600 V	-55 °C	150 °C	141 µJ 215 µJ	Surface Mount	TO-263 (D2PAK)	15 ns 36 ns	16 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 nC	60 ns	2.8 V	10 A 15 V 20 Ohm 300 V	30 A	75 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 600 V 16 A 75 W Surface Mount TO-263 (D2PAK)

Technical documentation and resources