E3000EC45E

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IXYS

DIODE GEN PURP 4.5KV 3410A W111

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IXYS

DIODE GEN PURP 4.5KV 3410A W111

Technical Specifications

Parameters and characteristics for this part

Specification	E3000EC45E

Current - Average Rectified (Io)	3410 A
Current - Reverse Leakage @ Vr	90 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	140 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-200AE
Reverse Recovery Time (trr)	1.25 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	W111
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	4500 V
Voltage - Forward (Vf) (Max) @ If	3.1 V

Part	Reverse Recovery Time (trr)	Mounting Type	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
IXYS E3000EC45E	1.25 µs	Chassis Mount	3410 A	DO-200AE	90 mA	4500 V	W111	3.1 V	Standard Recovery >500ns	200 mA	Standard	-40 °C	140 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	6	$ 1146.29

General part information

Diode 4500 V 3410A Chassis Mount W111

Technical documentation and resources

No documents available