Technical Specifications
Parameters and characteristics for this part
| Specification | 2N2907AUB1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 50 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 1.8 W |
| Supplier Device Package | UB |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.6 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 112.74 | |
| 10 | $ 107.41 | |||
| 25 | $ 105.12 | |||
| 80 | $ 99.79 | |||
Description
General part information
2N2907AHR Series
The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
Qualified as per ESCC 5202/001 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Documents
Technical documentation and resources