TJ30S06M3L(T6L1,NQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 30A DPAK

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 30A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TJ30S06M3L(T6L1,NQ

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	3950 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	21.8 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Technology	Mounting Type
Toshiba Semiconductor and Storage TJ30S06M3L,LXHQ	175 °C	30 A	21.8 mOhm	68 W	DPAK+	3 V	-20 V	10 V	60 V	3950 pF	80 nC	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	MOSFET (Metal Oxide)	Surface Mount
Toshiba Semiconductor and Storage TJ30S06M3L(T6L1,NQ	175 °C	30 A	21.8 mOhm	68 W	DPAK+	3 V	-20 V	10 V	60 V	3950 pF	80 nC	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	MOSFET (Metal Oxide)	Surface Mount

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General part information

P-Channel 60 V 30A (Ta) 68W (Tc) Surface Mount DPAK+

Technical documentation and resources