FST83100M

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 100V 80A D61-3M

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Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 100V 80A D61-3M

Technical Specifications

Parameters and characteristics for this part

Specification	FST83100M

Current - Average Rectified (Io) (per Diode)	80 A
Current - Reverse Leakage @ Vr	1.5 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D61-3M
Speed	200 mA, 500 ns
Supplier Device Package	D61-3M
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	840 mV

Part	Technology	Supplier Device Package	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Diode Configuration
GeneSiC Semiconductor FST83100M	Schottky	D61-3M	D61-3M	150 °C	-55 °C	840 mV	100 V	80 A	Chassis Mount	1.5 mA	200 mA 500 ns	1 Pair Common Cathode
GeneSiC Semiconductor FST8380M	Schottky	D61-3M	D61-3M	150 °C	-55 °C	840 mV	80 V	80 A	Chassis Mount	1.5 mA	200 mA 500 ns	1 Pair Common Cathode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 100 V 80A (DC) Chassis Mount D61-3M

Technical documentation and resources