1N3882

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GeneSiC Semiconductor

DIODE GEN PURP 300V 6A DO4

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GeneSiC Semiconductor

DIODE GEN PURP 300V 6A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N3882

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Technology	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
GeneSiC Semiconductor 1N3882	Standard	200 mA 500 ns	1.4 V	6 A	DO-4	300 V	200 ns	15 µA	Chassis Stud Mount	DO-203AA DO-4 Stud	150 °C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 300 V 6A Chassis, Stud Mount DO-4

Technical documentation and resources