HS2J

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Taiwan Semiconductor Corporation

75NS, 2A, 600V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

75NS, 2A, 600V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HS2J

Capacitance @ Vr, F	30 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case	Supplier Device Package	Supplier Device Package	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
Taiwan Semiconductor Corporation HS2J R5G	200 mA 500 ns	1.7 V	150 °C	-55 °C	2 A	DO-214AA SMB	SMB	DO-214AA	75 ns	30 pF	5 µA	Standard	Surface Mount	600 V
Taiwan Semiconductor Corporation HS2J	200 mA 500 ns	1.7 V	150 °C	-55 °C	2 A	DO-214AA SMB	SMB	DO-214AA	75 ns	30 pF	5 µA	Standard	Surface Mount	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 2A Surface Mount DO-214AA (SMB)

Technical documentation and resources